Effect of Surface Excitations on the Reflection Electron Energy Loss Spectrum in Silicon

被引：0
|
作者：
Parshin, A. S. [1 ]
Aleksandrova, G. A. [1 ]
Zyuganova, A. V. [1 ]
机构：
[1] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2007年 / 1卷 / 03期
关键词：
Surface Investigation; Inelastic Scattering; Neutron Technique; Electron Energy Loss Spectrum; Elastic Peak;
D O I：
10.1134/S1027451007030172
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60-1000 eV. Good agreement is obtained between the experimental values of the surface parameter P(S) and theoretical calculations. The relative contribution of surface excitations is also determined by decomposing the integral reflection electron energy loss spectra into Gaussian curves.
引用
收藏
页码：323 / 327
页数：5
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