Dry etching characteristics of TiN thin films in CF4/BCl3/N2 plasma

被引：4
|
作者：
Joo, Young-Hee [1 ]
Woo, Jong-Chang [1 ]
Kim, Chang-Il [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156759, South Korea
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 06期
关键词：
Titanium nitride; Boron trichloride; Carbon tetrafluoride; Nitrogen; Inductively coupled plasma; Etching; X-ray photoelectron spectroscopy; Scanning electron microscopy;
D O I：
10.1016/j.tsf.2011.10.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we investigated the etching characteristics of TiN thin film and the selectivity of TiN to SiO2 in an inductively coupled CF4/BCl3/N-2 plasma system. The dry etching mechanism of TiN thin films was studied by varying the CF4/BCl3/N-2 gas mixing ratio, RF power, direct current (DC) bias voltage, and process pressure. The optimized process conditions were as follows: RF power of 700 W, DC-bias voltage of -100 V, process pressure of 1 Pa, and substrate temperature of 40 degrees C. The maximum etch rate of the TiN thin films was 109 nm/min with the CF4/BCl3/N-2 (2:5:15 sum) plasma. Non-volatile etching byproducts were Ti-F compounds as determined by X-ray photoelectron spectroscopy analysis. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2339 / 2342
页数：4
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