Two-dimensional Mn structure on the GaN growth surface and evidence for room-temperature spin ordering

被引:21
|
作者
Wang, Kangkang [1 ]
Takeuchi, Noboru [1 ,2 ]
Chinchore, Abhijit V. [1 ]
Lin, Wenzhi [1 ]
Liu, Yinghao [1 ]
Smith, Arthur R. [1 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Nanoscale & Quantum Phenomena Inst, Athens, OH 45701 USA
[2] Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Ensenada 22800, Baja California, Mexico
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 16期
基金
美国国家科学基金会;
关键词
GAN(0001);
D O I
10.1103/PhysRevB.83.165407
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A class of striped superstructures with local hexagonal ordering has been obtained by depositing submonolayer Mn on the GaN(0001) surface. Combining scanning tunneling microscopy and first-principles theory, we find that Mn atoms incorporate into the surface and form a high-density two-dimensional MnxGa1-x structure. The highly spin-polarized Mn d electrons are found to dominate the surface electronic states. For the narrowest stripes, we calculate a row-wise antiferromagnetic ground state, which is observed in real space at room temperature as a spin-induced asymmetry in the density of states. These two-dimensional magnetic structures on GaN can also be considered model systems for wide-band-gap magnet/semiconductor spin injectors.
引用
收藏
页数:5
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