Quantitative scanning evanescent microwave microscopy and its applications in characterization of functional materials libraries

被引：55
|
作者：
Gao, C [1 ]
Hu, B
Takeuchi, I
Chang, KS
Xiang, XD
Wang, G
机构：
[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230029, Anhui, Peoples R China
[3] Univ Maryland, Small Smart Syst Ctr, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[4] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
[5] Intematix Corp, Moraga, CA 94556 USA
来源：
MEASUREMENT SCIENCE AND TECHNOLOGY | 2005年 / 16卷 / 01期
关键词：
combinatorial material science; high-throughput characterization; scanning evanescent microwave microscopy; near-field microscopy; dielectric/ferroelectric materials; dielectric constant; electric impedance;
D O I：
10.1088/0957-0233/16/1/033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper gives a comprehensive review on the advances in the field of scanning evanescent microwave microscopy, as a high-throughput characterization tool for electrical properties. Theoretical model analyses used for performing quantitative non-destructive characterization of various materials are presented. Examples of applications of the microwave microscopy to the rapid measurements of dielectric/ferroelectric libraries are given.
引用
收藏
页码：248 / 260
页数：13
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