Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System

被引：14
|
作者：
You, HyunWoo [1 ,2 ]
Bae, Sung-Hwan [2 ]
Kim, Jongman [3 ]
Kim, Jin-Sang [1 ]
Park, Chan [2 ,4 ]
机构：
[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 130650, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[4] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151742, South Korea
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期
关键词：
MOCVD; Bi2Te3; thermoelectric; nanocrystallite; THIN-FILMS; GROWTH; DEVICES; SB2TE3;
D O I：
10.1007/s11664-010-1490-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanocrystalline Bi2Te3 films were deposited on (100) GaAs substrates using a modified metalorganic chemical vapor deposition (MOCVD) system, and the effect of growth parameters on the structural properties were investigated. The modified MOCVD system employed a mixing room for the formation of nanoparticles of Bi2Te3 by gas-phase reaction and a graphite susceptor for growth of nanoparticles on the substrate. The grown films contained many crystallites of nanosize, and large crystallites consisted of small particles a few tens of nanometer in size. This nanostructured film approach can be an economical way of producing high-performance thermoelectric films with nanostructure compared with other top-down methods.
引用
收藏
页码：635 / 640
页数：6
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