Elastic scattering of exciton polaritons

被引：3
|
作者：
Averkiev, N. S. [1 ]
Savchenko, G. M. [2 ]
Seisyan, R. P. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
来源：
PHYSICS OF THE SOLID STATE | 2015年 / 57卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
CRYSTALS;
D O I：
10.1134/S106378341502002X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The probability of elastic scattering by impurities of exciton polaritons in thin GaAs samples has been calculated theoretically. It has been shown that thin samples of commercially pure GaAs satisfy the conditions for the existence of exciton polaritons. It has also been demonstrated that, in the case of GaAs, the inclusion of the polariton effect in the analysis leads only to a slight decrease in the scattering probability calculated for a "bare" exciton. The role of elastic scattering of exciton polaritons in the absorption of light by a semiconductor has been discussed.
引用
收藏
页码：290 / 295
页数：6
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