Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

被引：3

作者：

Calvez, Stephane ^{[1
]}

Calmon, Pierre-Francois ^{[1
]}

Arnoult, Alexandre ^{[1
]}

Gauthier-Lafaye, Olivier ^{[1
]}

Fontaine, Chantal ^{[1
]}

Almuneau, Guilhem ^{[1
]}

机构：

[1] Univ Toulouse, CNRS, LAAS, 7 Ave Colonel Roche, F-31400 Toulouse, France

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 16期

关键词：

OXIDATION; LASERS;

D O I：

10.1364/OE.25.019275

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we demonstrate that buried oxide-confined waveguides can be formed using a lateral oxidation process carried out through a discrete set of small-diameter via-holes instead of the conventional scheme where the oxidation starts from the edges of etched mesas. The via-hole oxidation is shown to lead to straight waveguides with smooth oxide/semiconductor interfaces and whose propagation losses are similar to one obtained using the standard process but with the advantage of maintaining a quasi-planar wafer surface. It thereby paves the way towards a simplification of the fabrication of III-Vsemiconductor-oxide photonic devices. (C) 2017 Optical Society of America

引用

页码：19275 / 19280

页数：6

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