Transconductance enhancement in deep submicron strained-Si n-MOSFETs

被引：108

作者：

Rim, K ^{[1
]}

Hoyt, JL ^{[1
]}

Gibbons, JF ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by similar to 75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by similar to 45% for channel lengths of 0.1 mu m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.

引用

页码：707 / 710

页数：4

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