An experimental investigation of Zn diffusion into InP and InGaAs

被引：7
|
作者：
He, SX [1 ]
Zhao, YL
机构：
[1] Wuhan Univ Technol, Sch Sci, Wuhan 430070, Peoples R China
[2] Wuhan Res Inst Posts & Commun, Wuhan 430074, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 02期
关键词：
D O I：
10.1088/0268-1242/20/2/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this report, we investigate the profiles of zinc (Zn) in n-type InP <100> single crystal wafers and InGaAs epitaxial film prepared by semi-closed ampoule Zn diffusion. The different annealing effect on junction depth and concentration for InP and InGaAs is studied, and the difference is tentatively ascribed to solubility for each material. The maximum net acceptor concentration in InP changes from 3.3 x 10(17) cm(-3) to 3.3 x 10(11) cm(-1) before and after annealing, and the later value is close to the solubility limit for closed-ampoule Zn diffusion InP. Annealing does not make the maximum net acceptor concentration and depth in InGaAs change much. Our experiments show that Zn diffusion InGaAs can be used as a good ohmic contact material for photoelectric devices due to its high acceptor concentration.
引用
收藏
页码：149 / 151
页数：3
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