A 15-GHz single-pole double-throw annular MOSFET switch for space application

被引：1

作者：

Wang, L ^{[1
]}

Sun, PP ^{[1
]}

Rajashekharaiah, M ^{[1
]}

Heo, D ^{[1
]}

Champion, CL ^{[1
]}

Larue, GS ^{[1
]}

机构：

[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA

来源：

2005 IEEE Workshop on Microelectronics and Electron Devices | 2005年

关键词：

SPDT switch; annular MOSFET; radiation tolerant; conformal mapping;

D O I：

10.1109/WMED.2005.1431633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high isolation 15-GHz radiation tolerant SPDT (Single-Pole Double-Throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved total-dose radiation tolerance in CMOS circuits. The designed switch achieves 40.5-dB isolation at 15-GHz.

引用

页码：103 / 106

页数：4

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