Substrate effect on excimer laser assisted crystal growth in phosphor Ca0.997Pr0.002TiO3 polycrystalline thin films

被引：9

作者：

Nakajima, Tomohiko ^{[1
]}

Tsuchiya, Tetsuo ^{[1
]}

Kumagai, Toshiya ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

来源：

APPLIED SURFACE SCIENCE | 2007年 / 254卷 / 04期

关键词：

excimer laser assisted metal organic deposition; low-temperature fabrication; thin film; phosphor; perovskite titanate; laser anneal;

D O I：

10.1016/j.apsusc.2007.07.153

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ca0.997Pr0.002TiO3 thin films that show strong red luminescence were successfully prepared by means of an excimer laser assisted metal organic deposition process with a KrF laser at a fluence of 100 mJ/cm(2) at 100 degrees C. The CPTO films grew on the silica, borosilicate, and indium-tin-oxide coated glasses. The crystallinity of the Ca0.997Pr0.002TiO3 films depended on the substrates; the borosilicate and indium-tin-oxide coated glasses with a large optical absorption of a KrF laser (lambda=248 nm) were effective for the crystallization for the Ca0.997Pr0.002TiO3 In addition, a high thermal conductivity of the indium-tin-oxide coated glass substrate could also improve the crystallinity due to an enhancement of thermal propagation to the film. Oxygen annealing at 500 degrees C for 6 h successfully eliminated the oxygen vacancy produced by the laser irradiation, and also remarkably improved the PL emission intensity. Thus, we have shown that substrate properties such as an optical absorbance and a thermal conductivity were quite important factors for the crystal growth and the PL emission for the Ca0.997Pr0.002TiO3 in the excimer laser assisted metal organic deposition process. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：884 / 887

页数：4

共 43 条

[41] Growth of YBa2Cu3O7-delta-Ag thin films (T-c(0)=89 K) by pulsed laser ablation on polycrystalline Ba2LaNbO6: A new perovskite ceramic substrate
Kurian, J
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APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2909 - 2911
[42] The effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - An x-ray triple crystal diffractometry and synchrotron x-ray topography study
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Xie, ZY
Rek, Z
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1045 - 1048
[43] Effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - an X-ray triple crystal diffractometry and synchrotron X-ray topography study
Chaudhuri, J.
George, J.T.
Edgar, J.H.
Xie, Z.Y.
Rek, Z.
Materials Science Forum, 2000, 338

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