Low-threshold 1.3 mu m wavelength, strained-layer InGaAsP multi-quantum well lasers grown by all solid source molecular beam epitaxy

被引：4
|
作者：
Toivonen, M
Savolainen, P
Asonen, H
Murison, R
机构：
[1] EG&G OPTOELECT CANADA,VAUDREUIL,PQ J7V 8P7,CANADA
[2] TUTCORE LTD,FIN-33721 TAMPERE,FINLAND
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 5B期
关键词：
laser diode; InGaAsp; SSMBE; strained-layer; multi-quantum well;
D O I：
10.1143/JJAP.35.L634
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth, by all solid source molecular beam epitaxy (SSMBE) of low-threshold 1.3 mu m wavelength strained-layer InGaAsP multi-quantum well lasers. A threshold current density of 400 A/cm(2) was achieved for a 1600 mu m long broad-area laser, and a threshold current of 18 mA was measured for a 5 x 320 mu m as-cleased area ridge waveguide laser. These are the lowest values reported for SSMBE grown material, and the fabricated lasers compare favourably to the best devices grown by other techniques.
引用
收藏
页码：L634 / L636
页数：3
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