Fast, automatic and accurate HFET small-signal characterization

被引：0
|
作者：
Garcia, M [1 ]
Yhland, K
Zirath, H
Angelov, I
Rorsman, N
机构：
[1] Chalmers Univ Technol, Dept Microwave Technol, Millimeterewave Grp, S-41296 Gothenburg, Sweden
[2] Ericsson Microwave Syst, Molndal, Sweden
来源：
MICROWAVE JOURNAL | 1997年 / 40卷 / 07期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An automatic data-acquisition program with the capability to extract the heterostructure FET (HFET) small-signal parameters directly is presented. All of the essential equations and equivalent circuits are given as well as experimental results obtained from measurements on a commercially available GaAs HFET. An expression for the model error is presented and used for a study of the model limits in terms of the bias applied.
引用
收藏
页码：102 / +
页数：8
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