Self-aligned double-patterning layout decomposition for two-dimensional random metals for sub-10-nm node design

被引：5

作者：

Ban, Yongchan ^{[1
]}

Pan, David Z. ^{[2
]}

机构：

[1] LG Elect, Syst IC R&D Lab, Seoul 137893, South Korea

[2] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2015年 / 14卷 / 01期

基金：

美国国家科学基金会;

关键词：

self-aligned double patterning; decomposition; lithography; two-dimensional random metals; 10-nm node; layout design;

D O I：

10.1117/1.JMM.14.1.011004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-aligned double patterning (SADP) is popularly in production use for one-dimensional-type dense patterns with good pitch control in NAND Flash memory applications and the fin layer patterning of FinFET devices, but it is still challenging to apply SADP to two-dimensional (2-D) random metal patterns. We describe the SADP layout decomposition methods for complex 2-D layouts. The SADP for complex logic metals consists of a two mask approach using a core (mandrel) mask and a trim mask. This paper describes methods for automatically choosing and optimizing the manufacturability of base core mask patterns, generating assist core patterns, and optimizing trim mask patterns to accomplish high quality layout decomposition in the SADP process. Our technique is validated with 22-nm node industrial standard cells and logic designs, which can be applicable to sub-10-nm node design. Experimental results show that our proposed layout decomposition for SADP effectively decomposes many challenging 2-D layouts. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：15