Characterization of SOI substrates: Application to recent SIMOX and Unibond(R) wafers

被引：0
|
作者：
Aspar, B
Moriceau, H
AubertonHerve, AJ
机构：
来源：
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1996年 / 96卷 / 03期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon On Insulator materials are highly attractive for ULSI applications and so their quality must be well controlled. Different characterization tools used for SOI materials iii order to investigate the material morphology, the thickness uniformities, the top silicon layer crystalline quality, the buried oxide integrity and some electrical parameters are reviewed. These characterization techniques have been used to compare SIMOX and Unibond(R) wafers.
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页码：99 / 111
页数：13
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