On the mechanism of plasma enhanced dielectric deposition charging damage

被引：21
|
作者：
Cheung, KP [1 ]
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 2000年
关键词：
D O I：
10.1109/PPID.2000.870658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The photoconduction is shown to be the mechanism for plasma charging damage during plasma enhanced dielectric deposition. Details of the process, including polarity effect are explained. The recently measured oxide photoconductivity is shown to be in agreement with expectation. The main cause of severe charging damage is the low level of photoconduction coupled with high processing temperature.
引用
收藏
页码：161 / 163
页数：3
相关论文
共 50 条
  • [41] Plasma-charging damage: a physical model
    1600, American Inst of Physics, Woodbury, NY, USA (75):
  • [42] PLASMA-CHARGING DAMAGE - A PHYSICAL MODEL
    CHEUNG, KP
    CHANG, CP
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) : 4415 - 4426
  • [43] High density plasma FSG charging damage
    Ang, TC
    Tse, MS
    Loong, SY
    Wong, YC
    Loh, WB
    PROCESS CONTROL AND DIAGNOSTICS, 2000, 4182 : 151 - 158
  • [44] Plasma charging damage on ultrathin gate oxides
    Park, D
    Hu, CM
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (01) : 1 - 3
  • [45] Oxide thickness dependence of plasma charging damage
    Lin, HC
    Chen, CC
    Wang, MF
    Hsien, SK
    Chien, CH
    Huang, TY
    Chang, CY
    MICROELECTRONICS RELIABILITY, 1999, 39 (03) : 357 - 364
  • [46] Mechanism of mechanical and chemical polishing in low dielectric constant plasma-enhanced chemical vapor deposition SiOC layer from hexamethyldisiloxane
    Hara, T
    Togoh, F
    Kurosu, T
    Sakamoto, K
    Shioya, Y
    Ishimaru, T
    Doy, TK
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (08) : G65 - G67
  • [47] Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition
    Kikuchi, Yoshiyuki
    Miyatani, Kotaro
    Kobayashi, Yasuo
    Kawamura, Kohei
    Nemoto, Takenao
    Nakamura, Masahiro
    Matsumoto, Hirokazu
    Ito, Azumi
    Shirotori, Akihide
    Nozawa, Toshihisa
    Matsuoka, Takaaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
  • [48] Measurement and simulation of spreading current in interlayer dielectric film deposition by plasma-enhanced chemical vapor deposition
    Matsunaga, Noriaki
    Okumura, Hirokatsu
    Jinnai, Butsurin
    Samukawa, Seiji
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (04):
  • [49] Plasma enhanced chemical vapor deposition of low dielectric constant SiCFO thin films
    Kim, TH
    Im, YH
    Hahn, YB
    CHEMICAL PHYSICS LETTERS, 2003, 368 (1-2) : 36 - 40
  • [50] Conformal dielectric films on silicon nanowire arrays by plasma enhanced chemical vapor deposition
    Fronheiser, J.
    Balch, J.
    Tsakalakos, L.
    JOURNAL OF NANOPARTICLE RESEARCH, 2008, 10 (06) : 955 - 963
12345