Architectural power models for SRAM and CAM structures based on hybrid analytical/empirical techniques

被引:19
|
作者
Liang, Xiaoyao [1 ]
Turgay, Kerem [1 ]
Brooks, David [1 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1109/ICCAD.2007.4397367
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
The need to perform power analysis in the early stages of the design process has become critical as power has become a major design constraint. Embedded and high-performance microprocessors incorporate large on-chip cache and similar SRAM-based or CAM-based structures, and these components can consume a significant fraction of the total chip power. Thus an accurate power modeling method for such structures is important in early architecture design studies. We present a unified architecture-level power modeling methodology for array structures which is highly-accurate, parameterizable, and technology scalable. We demonstrate the applicability of the model to different memory structures (SRAMs and CAMs) and include leakage-variability in advanced technologies. The power modeling approach is validated against HSPICE power simulation results, and we show power estimation accuracy within 5% of detailed circuit simulations.
引用
收藏
页码:824 / 830
页数:7
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