Oxygen transport and GeO2 stability during thermal oxidation of Ge

被引：31

作者：

da Silva, S. R. M. ^{[2
]}

Rolim, G. K. ^{[1
]}

Soares, G. V. ^{[2
]}

Baumvol, I. J. R. ^{[2
,3
]}

Krug, C. ^{[2
,4
]}

Miotti, L. ^{[5
]}

Freire, F. L., Jr. ^{[6
]}

da Costa, M. E. H. M. ^{[6
]}

Radtke, C. ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[3] Univ Caxias do Sul, BR-95070560 Caxias Do Sul, Brazil

[4] CEITEC SA, BR-91550000 Porto Alegre, RS, Brazil

[5] Soprano Ltda, BR-95180000 Farroupilha, Brazil

[6] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453900 Rio de Janeiro, Brazil

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

关键词：

ELECTRICAL-PROPERTIES; GERMANIUM; INTERFACE; GE(100); OXIDE;

D O I：

10.1063/1.4712619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712619]

引用

页数：4

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