Radiative recombination and self-trapping of excitons via biexciton states in RbI

被引：4

作者：

Tsujibayashi, T ^{[1
]}

Toyoda, K ^{[1
]}

Hayashi, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC INTEGRATED HUMAN STUDIES,KYOTO 60601,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.53.R16129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed a luminescence band at 5.675 eV in RbI under dense excitation with a uv laser. The band is located 50 meV lower than the main peak of the free-exciton luminescence (FEL). The intensity of the band increases with an increase in the excitation intensity depending quadratically on the FEL intensity. The 5.675-eV band is assigned to luminescence of a biexciton leaving an exciton behind. The luminescence spectrum of self-napped excitons changes with the appearance of the biexciton luminescence. The spectral change is explained by a model including formation and decomposition processes of biexcitons.

引用

页码：16129 / 16132

页数：4

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