Improving doping efficiency of P+ implanted ions in 4H-SiC

被引：3
|
作者：
Nipoti, R. [1 ]
Nath, A. [1 ,2 ]
Cristiani, S. [1 ]
Sanmartin, M. [1 ]
Rao, Mulpuri V. [2 ]
机构：
[1] CNR IMM Bologna, Via Gobetti 101, I-40129 Bologna, Italy
[2] George Mason Univ, ECE Dept, Fairfax, VA 22030 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
4H-SiC; Phosphorous; ion implantation; post implantation annealing; ELECTRICAL ACTIVATION; CARBIDE;
D O I：
10.4028/www.scientific.net/MSF.679-680.393
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An inductively heated furnace and an ultra-fast microwave heating system have been used for performing post implantation annealing processes of P+ implanted semi-insulating < 0001 > 4H-SiC at 1800-1950 degrees C for 5 min and 2000-2050 degrees C for 30 s, respectively. Very high P+ implantation fluences in the range 7x10(19) - 8x10(2) cm(-3) have been studied. The annealing processes in the inductive furnace and the one at the lower temperature in the microwave furnace show a saturation in the efficiency of the electrical activation of the implanted P+ that is bypassed by the microwave annealing process at the higher temperature. The measured electron mobility values versus electron density are elevated in all the studied samples and for every post implantation annealing process. This has been ascribed to an elevated implanted crystal recovery due to the very high annealing temperatures >= 1800 degrees C.
引用
收藏
页码：393 / +
页数：2
相关论文
共 50 条
  • [21] Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
    Calabretta, Cristiano
    Agati, Marta
    Zimbone, Massimo
    Boninelli, Simona
    Castiello, Andrea
    Pecora, Alessandro
    Fortunato, Guglielmo
    Calcagno, Lucia
    Torrisi, Lorenzo
    La Via, Francesco
    MATERIALS, 2019, 12 (20)
  • [22] Modification mechanism of collaborative ions implanted into 4H-SiC by atomic simulation and experiment
    Kang, Qiang
    Fang, Xudong
    Wu, Chen
    Sun, Hao
    Tian, Bian
    Zhao, Libo
    Wang, Songli
    Jiang, Zhuangde
    Zhu, Nan
    Maeda, Ryutaro
    Zhang, Meiju
    Lv, Yuanjie
    INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES, 2021, 212
  • [23] The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC
    Peng, B.
    Zhang, Y. M.
    Dong, L. P.
    Wang, Y. T.
    Jia, R. X.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (13)
  • [24] Ohmic contacts to p-type epitaxial and implanted 4H-SiC
    Crofton, J.
    Williams, J. R.
    Adedeji, A. V.
    Scofield, J. D.
    Dhar, S.
    Feldman, L. C.
    Bozack, M. J.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 895 - 898
  • [25] Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes
    Fabbri, F.
    Natalini, D.
    Cavallini, A.
    Sekiguchi, T.
    Nipoti, R.
    Moscatelli, F.
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (4-5) : 383 - 387
  • [26] High temperature (500 °C) implantation study of P+ and N+ implanted epitaxial N-type 4H-SiC
    Scott, MB
    Yeo, YK
    Hengehold, RL
    Scofield, JD
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 763 - 768
  • [27] Improved implanted RESURF MOSFETS in 4H-SiC
    Banerjee, S., 2000, IEEE, Piscataway, NJ, United States
  • [28] Lateral straggling of implanted aluminum in 4H-SiC
    Muting, J.
    Bobal, V.
    Neset Sky, T.
    Vines, L.
    Grossner, U.
    APPLIED PHYSICS LETTERS, 2020, 116 (01)
  • [29] Microwave Annealing of Ion Implanted 4H-SiC
    Rao, Mulpuri V.
    Nath, A.
    Qadri, S. B.
    Tian, Y-L.
    Nipoti, R.
    ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 241 - +
  • [30] Strain measurements on nitrogen implanted 4H-SiC
    Amigou, Matthieu
    Beaufort, M. F.
    Declemy, A.
    Leclerc, S.
    Barbot, J. F.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 185 - 188
12345