Improving doping efficiency of P+ implanted ions in 4H-SiC

被引：3

作者：

Nipoti, R. ^{[1
]}

Nath, A. ^{[1
,2
]}

Cristiani, S. ^{[1
]}

Sanmartin, M. ^{[1
]}

Rao, Mulpuri V. ^{[2
]}

机构：

[1] CNR IMM Bologna, Via Gobetti 101, I-40129 Bologna, Italy

[2] George Mason Univ, ECE Dept, Fairfax, VA 22030 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

4H-SiC; Phosphorous; ion implantation; post implantation annealing; ELECTRICAL ACTIVATION; CARBIDE;

D O I：

10.4028/www.scientific.net/MSF.679-680.393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An inductively heated furnace and an ultra-fast microwave heating system have been used for performing post implantation annealing processes of P+ implanted semi-insulating < 0001 > 4H-SiC at 1800-1950 degrees C for 5 min and 2000-2050 degrees C for 30 s, respectively. Very high P+ implantation fluences in the range 7x10(19) - 8x10(2) cm(-3) have been studied. The annealing processes in the inductive furnace and the one at the lower temperature in the microwave furnace show a saturation in the efficiency of the electrical activation of the implanted P+ that is bypassed by the microwave annealing process at the higher temperature. The measured electron mobility values versus electron density are elevated in all the studied samples and for every post implantation annealing process. This has been ascribed to an elevated implanted crystal recovery due to the very high annealing temperatures >= 1800 degrees C.

引用

页码：393 / +

页数：2

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