Characterization of CdZnTe crystals grown by HPB method

被引：38

作者：

Komar, V ^{[1
]}

Gektin, A

Nalivaiko, D

Klimenko, I

Migal, V

Panchuk, O

Rybka, A

机构：

[1] STC Inst Single Crystals, UA-310001 Kharkov, Ukraine

[2] Chernovtsy State Univ, UA-274012 Chernovtsy, Ukraine

[3] Kharkov Phys & Technol Inst, UA-310108 Kharkov, Ukraine

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期

关键词：

cadmium zinc telluride; crystal growth; high-pressure Bridgman method; thermal growth conditions; crystalline defects; detection properties; investigation methods;

D O I：

10.1016/S0168-9002(00)00856-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Three individual groups of HPB CZT crystals were grown under different thermal conditions. The study of structure defects and non-uniformities in the crystals was performed and the results were connected with configuration of the liquid-solid interface shape at crystallization. Various conventional methods and some new techniques (adiabatic laser calorimetry, photorelaxation and thermorelaxation dielectric spectroscopy) were used to display an improvement of CZT crystallinity and homogeneity of Zn distribution, as interface shape becomes more uniform. It was shown that spectrometric-grade CZT crystals can be obtained by HPB growth process just under specific thermal conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：113 / 122

页数：10

共 50 条

[41] Growth and characterization of 100 mm diameter CdZnTe single crystals by the vertical gradient freezing method
Asahi, T
Oda, O
Taniguchi, Y
Koyama, A
JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 20 - 27
[42] Full encapsulated CdZnTe crystals by the vertical Bridgman method
Zha, M.
Zappettini, A.
Calestani, D.
Marchini, L.
Zanotti, L.
Paorici, C.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 2072 - 2075
[43] Characterization of high-resistivity Poly-CdZnTe thick films grown by thermal evaporation method
Kim, KH
Na, YH
Park, YJ
Jung, TR
Kim, SU
Hong, JK
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3094 - 3097
[44] Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
Zappettini, A.
Zha, M.
Pavesi, M.
Zanotti, L.
JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) : 283 - 288
[45] Preliminary results on Bridgman grown CdZnTe detector crystals assisted by ampoule rotation
Datta, Amlan
Swain, Santosh
Cui, Yunlong
Burger, Arnold
Lynn, Kelvin
HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XIV, 2012, 8507
[46] Evaluation of CdZnTe detectors using crystals grown by the modified vertical Bridgman technique
Sturm, BW
He, Z
Zurbuchen, TH
Koehn, PL
2004 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-7, 2004, : 4420 - 4424
[47] Synchrotron X-ray based characterization of CdZnTe crystals
Duff, Martine C.
Hunter, Douglas B.
Nuessle, Patterson
Black, David R.
Burdette, Harold
Woicik, Joseph
Burger, Arnold
Groza, Michael
JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (08) : 1092 - 1097
[48] Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method (vol 214, 1600748, 2017)
Zhou, Boru
Jie, Wanqi
Wang, Tao
Xu, Lingyan
Yang, Fan
Yin, Liying
Fu, Xu
Nan, Ruihua
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (10):
[49] Synchrotron X-ray Based Characterization of CdZnTe Crystals
Martine C. Duff
Douglas B. Hunter
Patterson Nuessle
David R. Black
Harold Burdette
Joseph Woicik
Arnold Burger
Michael Groza
Journal of Electronic Materials, 2007, 36 : 1092 - 1097
[50] CHARACTERIZATION OF SILICON-CRYSTALS GROWN BY THE HEAT-EXCHANGER METHOD
HYLAND, S
DUMAS, KA
SCHWUTTKE, GH
ENGELBRECHT, JAA
LEUNG, D
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C86 - C86

← 1 2 3 4 5 →