Characterization of CdZnTe crystals grown by HPB method

被引：38
|
作者：
Komar, V [1 ]
Gektin, A
Nalivaiko, D
Klimenko, I
Migal, V
Panchuk, O
Rybka, A
机构：
[1] STC Inst Single Crystals, UA-310001 Kharkov, Ukraine
[2] Chernovtsy State Univ, UA-274012 Chernovtsy, Ukraine
[3] Kharkov Phys & Technol Inst, UA-310108 Kharkov, Ukraine
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期
关键词：
cadmium zinc telluride; crystal growth; high-pressure Bridgman method; thermal growth conditions; crystalline defects; detection properties; investigation methods;
D O I：
10.1016/S0168-9002(00)00856-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Three individual groups of HPB CZT crystals were grown under different thermal conditions. The study of structure defects and non-uniformities in the crystals was performed and the results were connected with configuration of the liquid-solid interface shape at crystallization. Various conventional methods and some new techniques (adiabatic laser calorimetry, photorelaxation and thermorelaxation dielectric spectroscopy) were used to display an improvement of CZT crystallinity and homogeneity of Zn distribution, as interface shape becomes more uniform. It was shown that spectrometric-grade CZT crystals can be obtained by HPB growth process just under specific thermal conditions. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：113 / 122
页数：10
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