Simulation Study on DOI-PET Module Design Using LSO and New Silicon Photomultiplier

被引：0

作者：

Lee, C. H. ^{[1
]}

Cho, G. ^{[1
]}

Kim, H. D. ^{[1
]}

Jeon, H. S. ^{[1
]}

Kang, B. S. ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Nucl & Quantum Engn Dept, Taejon 305701, South Korea

来源：

2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6 | 2006年

关键词：

D O I：

10.1109/NSSMIC.2006.353800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiPM (Silicon Photomultiplier), which is 2D arrays of avalanche photodiodes operated in Geiger mode, is one of the candidates for photosenors of PET. In this paper, DOI-PET detector, which consists of 2 SiPM of 1.5 mm x 1.5 mm pixel size and 3 cm long LSO crystals, was designed using TCAD and DETECT2000. Because light photon distribution of scintillation crystal becomes different with respect to surface treatments, simulations to improve of DOI information were done with different surface conditions. Side surface treatments of LSO, which have best DOI information, were determined by DETECT2000 simulation. High quantum efficient SiPM was also designed using TCAD. In order to enhance quantum efficiency of SiPM, shallow junction is made by implantation and antireflection coating is also optimized.

引用

页码：3715 / 3717

页数：3

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