Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

被引:39
|
作者
Wu, Di [1 ,2 ]
Mo, Zhiheng [1 ,2 ]
Han, Yanbing [1 ,2 ]
Lin, Pei [1 ,2 ]
Shi, Zhifeng [1 ,2 ]
Chen, Xu [1 ,2 ]
Tian, Yongtao [1 ,2 ]
Li, Xin Jian [1 ,2 ]
Yuan, Huiyu [3 ]
Tsang, Yuen Hong [4 ]
机构
[1] Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou 450052, Peoples R China
[2] Zhengzhou Univ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China
[3] Zhengzhou Univ, Sch Mat & Engn, Zhengzhou 450052, Peoples R China
[4] Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
palladium diselenide; cadmium telluride; mixed dimensional; vdW heterojunction; infrared photodetector; IN-SITU FABRICATION; PHOTOVOLTAIC DETECTOR; PHOTODETECTOR; DESIGN; DRIVEN;
D O I
10.1021/acsami.1c11277
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe2/CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe2, high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to long-wave infrared (LWIR) of 10.6 mu m at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 x 10(12) Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe2/CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.
引用
收藏
页码:41791 / 41801
页数:11
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