Super-high-efficiency multi-junction solar cells

被引：50
|
作者：
Yamaguchi, M
Takamoto, T
Khan, A
Imaizumi, M
Matsuda, S
Ekins-Daukes, NJ
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
[2] Sharp Co Ltd, Nara, Japan
[3] Univ Alabama, Mobile, AL 36688 USA
[4] NASDA, Tsukuba, Ibaraki 3058505, Japan
来源：
PROGRESS IN PHOTOVOLTAICS | 2005年 / 13卷 / 02期
关键词：
III-V; multi-junction; radiation resistance; concentrator;
D O I：
10.1002/pip.606
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The status of Japanese development of super-high-efficiency In0.49Ga0.51P/In0.01GaAs/Ge multi-junction solar cells is reviewed. Key issues for a successful cell design are discussed, together with the technologies that have led to efficiency values of 29.1% AMO and >36% under concentrated 400 x AM1.5 illumination. The radiation resistance of the multi-junction solar cell is discussed, showing the degradation in performance for the InGaP, InGaAs and Ge junctions. Finally, some perspectives for further multi-junction cell development and alternative approaches to high efficiency are outlined. Copyright (C) 2005 John Wiley Sons, Ltd.
引用
收藏
页码：125 / 132
页数：8
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