Near-field optical probing of multi-exciton emission from single InGaAs quantum dots

被引：0
|
作者：
Chavez-Pirson, A [1 ]
Temmyo, J [1 ]
Ando, H [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the luminescence spectra from single quantum dots using low temperature near-field optical probing spectroscopy. We find that single dots containing a few excitons emit into a discrete set of energy states covering a wide-energy range that reflects the internal confinement potential and exciton occupancy. When the exciton number is large, dot emission is channeled through clusters of well-separated energy states. We study different dots from the same ensemble and correlate their multi-exciton energy structure with their confinement condition and growth formation.
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页码：1267 / 1268
页数：2
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