Evolution of Hydrogen-related Defect States in Amorphous In-Ga-Zn-O Analyzed by Photoelectron Emission Yield Experiments

被引：0

作者：

Hayashi, Kazushi ^{[1
]}

Hino, Aya ^{[1
]}

Tao, Hiroaki ^{[1
]}

Ochi, Mototaka ^{[1
]}

Goto, Hiroshi ^{[1
]}

Kugimiya, Toshihiro ^{[1
]}

机构：

[1] Kobe Steel Ltd, Elect Res Lab, Nishi Ku, 1-5-5 Takatsuka Dai, Kobe, Hyogo 6512271, Japan

来源：

2015 22ND INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2015年

关键词：

DIAMOND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 degrees C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.

引用

页码：131 / 132

页数：2

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