Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

被引：30
|
作者：
Ilchenko, VV
Lin, SD
Lee, CP
Tretyak, OV
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Kiev Taras Shevchenko Univ, Fac Radiophys, Kiev, Ukraine
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期
关键词：
D O I：
10.1063/1.1336519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots. (C) 2001 American Institute of Physics.
引用
收藏
页码：1172 / 1174
页数：3
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