Carrier accumulation and depletion in point-contact capacitance-voltage measurements

被引：2

作者：

Naitou, Yuichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, 1-1-1 Higashi, Tsukuba, Ibaraki 3058562, Japan

来源：

AIP ADVANCES | 2017年 / 7卷 / 11期

关键词：

ALL-METAL PROBE; MICROSCOPY;

D O I：

10.1063/1.5005861

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy in which a conductive probe tip detects the bias modulated capacitance for the purpose of measuring the nanoscale semiconductor carrier concentration. SCM can be regarded as a point-contact capacitance-voltage system, and its capacitance-voltage properties are different from those of a conventional parallel-plate capacitor. In this study, the charge accumulation and depletion behavior of a semiconductor sample were closely investigated by SCM. By analyzing the tip-sample approach curve, the effective probe tip area and charge depletion depth could be quantitatively determined. (C) 2017 Author(s).

引用

页数：6

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