MATIB Temporal changes of parameters in phase change memory

被引：1
|
作者：
Karpov, I. [1 ]
Mitra, M. [1 ]
Kau, D. [1 ]
Spadini, G. [1 ]
Kryukov, Y. A. [2 ]
Karpov, V. [2 ]
机构：
[1] Intel Corp, RN3 01,2200 Mission Coll Blvd, Santa Clara, CA 95052 USA
[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
来源：
2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | 2008年
关键词：
D O I：
10.1109/VTSA.2008.4530836
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：140 / +
页数：2
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