Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax=425 GHz

被引：15

作者：

Lee, S ^{[1
]}

Kim, HJ ^{[1
]}

Urteaga, M ^{[1
]}

Krishnan, S ^{[1
]}

Wei, Y ^{[1
]}

Dahlstrom, M ^{[1
]}

Rodwell, M ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 17期

关键词：

D O I：

10.1049/el:20010728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with f(max) = 425 GHz and f(tau) = 141 GHz using transferred-substrate technology are reported. This is the highest reported f(max) for a DHBT. The breakdown voltage BCCEO is 8 V at J(C) = 5 x 10(4) A/cm(2) and the DC current gain beta is 43.

引用

页码：1096 / 1098

页数：3

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