Numerical modeling and investigation of liquid phase epitaxy of Hg1-xCdxTe infrared detectors

被引:0
|
作者
Lin, K [1 ]
Dold, P
Figgemeier, H
Benz, KW
机构
[1] So Taiwan Univ Technol, Dept Mech Engn, Hsinchu, Taiwan
[2] Univ Freiburg, Inst Kristallog, D-7800 Freiburg, Germany
[3] AEG Infrarot Module GmbH, Heilbronn, Germany
关键词
heat and mass transfer; numerical simulation; inverse modeling method; liquid phase epitaxy; FIDAP;
D O I
10.1002/crat.200410442
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te-rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:832 / 838
页数:7
相关论文
共 50 条
  • [22] Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy
    Shanghai Institute of Technical, Physics of Chinese Academy of, Sciences, Shanghai, China
    J Cryst Growth, 1-2 (61-66):
  • [23] Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy
    Zhu, JQ
    Chu, JH
    Li, B
    Chen, XQ
    Cao, JY
    Cheng, JJ
    JOURNAL OF CRYSTAL GROWTH, 1997, 177 (1-2) : 61 - 66
  • [24] DENSITY OF LIQUID HG1-XCDXTE
    CHANDRA, D
    HOLLAND, LR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1620 - 1624
  • [25] ADVANCES IN HG IMPLANTED HG1-XCDXTE PHOTOVOLTAIC DETECTORS
    FIORITO, G
    GASPARRINI, G
    SVELTO, F
    INFRARED PHYSICS, 1975, 15 (04): : 287 - 293
  • [26] 1/f noise in Hg1-xCdxTe detectors
    D'Souza, AI
    Stapelbroek, MG
    Masterjohn, SA
    Wijewarnasuriya, PS
    DeWames, RE
    Williams, GM
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS VII, 2002, 4721 : 227 - 233
  • [27] INFRARED STUDIES IN HG1-XCDXTE ALLOYS
    CRONBURG, TL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 417 - &
  • [28] PHASE DIAGRAM OF HG1-XCDXTE
    SCHMIT, JL
    SPEERSCHNEIDER, CJ
    INFRARED PHYSICS, 1968, 8 (03): : 247 - +
  • [29] Thermal annealing studies of undoped Hg1-xCdxTe epilayers grown by Hg-rich liquid phase epitaxy
    Chavada, FR
    Garg, AK
    Kumar, S
    Nagpal, A
    Sharma, S
    Gupta, SC
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 61 - 63
  • [30] AN INVESTIGATION OF THE FAR INFRARED OPTICAL-PROPERTIES OF HG1-XCDXTE
    CASSELMAN, TN
    HANSEN, GL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1683 - 1686