Spin filling of valley-orbit states in a silicon quantum dot

被引：58

作者：

Lim, W. H. ^{[1
]}

Yang, C. H. ^{[1
]}

Zwanenburg, F. A. ^{[1
]}

Dzurak, A. S. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 33期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1088/0957-4484/22/33/335704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N = 27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realisation in the near future of spin qubits based on silicon quantum dots.

引用

页数：6

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