A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

被引：8

作者：

Chen, Tzu-Pin ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Hung, Ching-Wen ^{[1
]}

Chu, Kuei-Yi ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

breakdown; electron blocking; potential spike; step-graded collector;

D O I：

10.1109/LED.2007.911286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I-C = 10(-12) A to I-C = 10(-1) A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f(T) = 72.7 GHz and the maximum oscillation frequency f(max) = 50 GHz are achieved for a nonoptimized device (A(E) = 6 x 6 mu m(2)).

引用

页码：11 / 14

页数：4

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