Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications

被引:3
|
作者
Baldi, G. [1 ]
Bosi, M. [1 ]
Giusti, G. [2 ]
Attolini, G. [1 ]
Berzina, T. [1 ]
Collini, C. [3 ]
Lorenzelli, L. [3 ]
Mosca, R. [1 ]
Nozar, P. [2 ]
Ponraj, J. S. [1 ]
Toccoli, T. [2 ]
Verucchi, R. [2 ]
Iannotta, S. [1 ]
机构
[1] IIMEM CNR Inst, I-43124 Parma, Italy
[2] IMEM CNR Inst, I-38123 Trento, Italy
[3] FBK Bruno Kessler Fdn, I-38123 Trento, Italy
关键词
D O I
10.1063/1.4912531
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO2 thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.
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页数:4
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