A new silicon-based ferroelectric sandwich structure

被引：11
|
作者：
Ren, TL [1 ]
Zhang, LT [1 ]
Liu, LT [1 ]
Li, ZJ [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2001年 / 18卷 / 01期
关键词：
D O I：
10.1088/0256-307X/18/1/346
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O-3/PbTiO3 sandwich structure is fabricated by a sol-gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100 degrees C. Capacitance-voltage, polarization-electric field and dielectric-fiequency properties of this sandwich structure are studied. The Pb(ZrxTi1-x)O-3 films are proved to have good dielectric and ferroelectric properties.
引用
收藏
页码：132 / 133
页数：2
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