Transition metal dichalcogenide thin films for solar hydrogen production

被引:8
|
作者
Bozheyev, Farabi [1 ,2 ]
机构
[1] Helmholtz Zentrum Hereon GmbH, Inst Photoelectrochem, Max Planck Str 1, D-21502 Geesthacht, Germany
[2] Al Farabi Kazakh Natl Univ, Natl Nanolab, 71 Al Farabi Ave, Alma Ata 050040, Kazakhstan
关键词
Transition metal dichalcogenides (TMDs); Photoelectrodes; Thin films; Photocurrent density; Efficiency; Hydrogen evolution reaction (HER); WSE2; HETEROJUNCTION; PHOTOANODE; EFFICIENCY;
D O I
10.1016/j.coelec.2022.100995
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the last three decades, transition metal dichalcogenides (TMDs) have been extensively studied for electronic, photonic, and energy applications. Different efforts are directed to find a holy grail of efficient and economically feasible materials that could be simple in production and available on a large scale. The interest in TMDs (MoS2, WS2, MoSe2, WSe2) stems from their suitable electronic structure for efficient solar light ab-sorption and simple exfoliation technique of 2D crystallites due to the van der Waals bonding of these materials. This led to various designs and combinations of 2D single layers that could form heterojunctions and multijunctions for efficient light absorption, charge carrier generation/separation, and its transfer in optoelectronic and energy harvesting devices. Herein, TMD thin films are reviewed as photoelectrodes for solar hydrogen evolution and compared to that of other more developed materials.
引用
收藏
页数:8
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