InP/InGaAs HBTs using crystallographically defined emitter contact technology

被引：0
|
作者：
Kim, M [1 ]
Jeon, SK [1 ]
Shin, SH [1 ]
Yang, K [1 ]
Kwon, YS [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon, South Korea
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New self-alignment techniques employing crystallographically defined emitter contact (CDC) technologies have been developed to fabricate InP/InGaAs heterojunction bipolar transistors (HBTs). The CDC technologies utilize the anisotropic wet etching characteristics of the InP and InGaAs dummy emitter layers, grown on the typical HBT layer structure. The shape of the emitter contact is determined by the crystallographically etched profiles of the InP and InGaAs dummy emitter layers. The fabricated HBTs demonstrated excellent device performance characteristics, indicating the effectiveness of the new self-alignment technology.
引用
收藏
页码：1279 / 1282
页数：4
相关论文
共 50 条
  • [41] IMPROVED INP/INGAAS/INP PIN DETECTOR RESPONSE USING A TRANSPARENT CONDUCTOR CONTACT
    RUSSELL, JL
    KELLERT, F
    EHLERS, E
    MONAHAN, D
    ELECTRONICS LETTERS, 1990, 26 (16) : 1231 - 1232
  • [42] Sub-ft gain resonance of InP/InGaAs-HBTs
    Rohner, M
    Willén, B
    Jäckel, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) : 213 - 220
  • [43] Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs
    López-González, JM
    Garcias-Salvà, P
    Prat, L
    SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1307 - 1311
  • [44] On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
    Chen, Tzu-Pin
    Lee, Chi-Jhung
    Lour, Wen-Shiung
    Guo, Der-Feng
    Tsai, Jung-Hui
    Liu, Wen-Chau
    SOLID-STATE ELECTRONICS, 2009, 53 (02) : 190 - 194
  • [45] ELECTRON-TRANSPORT IN THIN-BASE INP/INGAAS HBTS
    LUNDSTROM, MS
    DODD, PE
    LOVEJOY, ML
    HARMON, ES
    MELLOCH, MR
    KEYES, BM
    HAMM, RA
    RITTER, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2658 - 2659
  • [46] Monte Carlo analysis of ultrahigh-speed InP/InGaAs HBTs
    Khrenov, G
    Kulkova, E
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1996, 11 (03) : 154 - 159
  • [47] Thermal stability and reliability of nonalloyed ohmic contacts on thin base InP/InGaAs/InP HBTs
    Chor, EF
    Malik, RJ
    Hamm, RA
    Ryan, RW
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 643 - 648
  • [48] InAlAs/InP/InGaAs/InP DHBTs with a novel composite-emitter design
    Driad, R.
    McKinnon, W.R.
    McAlister, S.P.
    Renaud, A.
    Garanzotis, T.
    SpringThorpe, A.J.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1999, : 435 - 439
  • [49] THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS
    YANG, K
    COWLES, JC
    EAST, JR
    HADDAD, GI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) : 1047 - 1058
  • [50] DC characterization of InP/InGaAs tunneling emitter bipolar transistor
    Cheng, S.-Y. (sycheng@niu.edu.tw), 1600, Japan Society of Applied Physics (44):
12345