Extremely Wideband 0.18-μm CMOS Compact Distributed Low-Noise Amplifier

被引：0
|
作者：
Chirala, M. [1 ]
Guan, X. [2 ]
Huynh, C. [3 ]
Nguyen, C. [3 ]
机构：
[1] Z Commun Inc, San Diego, CA 92121 USA
[2] Skyworks Solut Inc, Irvine, CA USA
[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
来源：
2010 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM | 2010年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-mu m CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 +/- 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 X 0.37 mm(2) chip size including RF pads.
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收藏
页数：4
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