A Precision Dose Control Circuit for Maskless E-Beam Lithography With Massively Parallel Vertically Aligned Carbon Nanofibers

被引：3
|
作者：
Eliza, Sazia A. [1 ]
Islam, Syed K. [1 ]
Rahman, Touhidur [1 ]
Bull, Nora Dianne [1 ]
Blalock, Benjamin J. [1 ]
Baylor, Larry R. [2 ]
Ericson, M. Nance [3 ]
Gardner, Walter L. [2 ]
机构：
[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Fus Energy Div, Oak Ridge, TN 37831 USA
[3] Oak Ridge Natl Lab, Engn Sci & Technol Div, Oak Ridge, TN 37831 USA
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2011年 / 60卷 / 04期
关键词：
Dose control circuit (DCC); maskless lithography; vertically aligned carbon nanofiber (VACNF); ARRAY LITHOGRAPHY; ELECTRICAL CHARACTERISTICS; MICROCATHODES; FABRICATION; NANOTUBES; ELECTRODE; COLUMNS;
D O I：
10.1109/TIM.2010.2090691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a highly accurate dose control circuit (DCC) for the emission of a desired number of electrons from vertically aligned carbon nanofibers (VACNFs) in a massively parallel maskless e-beam lithography system. The parasitic components within the VACNF device cause a premature termination of the electron emission, resulting in underexposure of the photoresist. In this paper, we compensate for the effects of the parasitic components and noise while reducing the area of the chip and achieving a precise count of emitted electrons from the VACNFs to obtain the optimum dose for the e-beam lithography.
引用
收藏
页码：1132 / 1140
页数：9
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