Active enhanced tunable high-Q on-chip E-band resonators in 130nm SiGe BiCMOS

被引：0

作者：

Singh, Nishant ^{[1
]}

Stander, Tinus ^{[1
]}

机构：

[1] Univ Pretoria, Dept EEC Engn, Carl & Emily Fuchs Inst Microelect, Pretoria, South Africa

来源：

2015 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2015年

关键词：

millimeter wave integrated circuits; BiCMOS integrated circuits; Q measurement; heterojunction bipolar transistors; resonators;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states.

引用

页码：201 / 204

页数：4

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