Control of fine particulate and gaseous contaminants by UV photoelectron method

被引：0
|
作者：
Seto, T
Yokoyama, S
Okuyama, K
Hirose, M
Fujii, T
Suzuki, H
机构：
[1] Hiroshima Univ, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1996年 / E79C卷 / 03期
关键词：
contamination control; MOS device; fine particle; ultraviolet; photoelectron;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Systems for removing particulates and gaseous contaminants using the UV/photoelectron method under atmospheric and low pressure conditions have been investigated and its availability has been demonstrated. From experimental results, more than 90% of particulate contaminants are removed by this method under atomospheric and low pressure conditions. This method can be used to design superclean spaces for wafer stockers, and wafer delivering systems in the LSI fabrication process.
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页码：306 / 311
页数：6
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