Photodetachment of H- near a partially reflecting surface-I

被引：4
|
作者：
Afaq, A. [1 ]
机构：
[1] COMSATS Inst Informat Technol, Dept Phys, Lahore, Pakistan
来源：
CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 02期
关键词：
D O I：
10.1088/0256-307X/25/2/034
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Theoretical and interpretative study on the subject of photodetachment of H- near a partially reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H- propagating towards the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K = 0 corresponds to no reflection and K = 1 corresponds to the total reflection.
引用
收藏
页码：475 / 478
页数：4
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