In-situ monitoring of crystal growth in LPE using microprocessor

LPE is the simplest technique for the growth of epitaxial layer. In this paper, we deal with the automation of LPE system through which the quantum well layers can be very precisely grown. The electronic hardware has been developed and is linked with the conventional LPE system. Software flowchart which deals with the various actions taken during the growth process has also been mentioned. Three different methods considered here are step, super, and equilibrium cooling. Our developed system demands only the layer thickness and other supporting parameters for the autocontrol. The cooling rate and the growth time are simultaneously and independently controlled. smooth layers in the wide range from nanometer to micron can be grown by using our LPE system. Because of this economic hardware linked with LPE system, it should have considerable practical importance in growth technology to fabricate the devices like quantum well lasers, modulators and switches.