Semiconductor Halogenation in Molecular Highly-Oriented Layered p-n (n-p) Junctions

被引:4
|
作者
Cojocariu, Iulia [1 ,2 ]
Jugovac, Matteo [1 ,2 ]
Sarwar, Sidra [1 ,3 ]
Rawson, Jeff [1 ,3 ]
Sanz, Sergio [1 ]
Koegerler, Paul [1 ,3 ]
Feyer, Vitaliy [1 ,4 ,5 ]
Schneider, Claus Michael [1 ,4 ,5 ,6 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52428 Julich, Germany
[2] Elettra Sincrotrone SCpA, SS 14 Km 163-5, I-34149 Trieste, Italy
[3] Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52056 Aachen, Germany
[4] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany
[5] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-47048 Duisburg, Germany
[6] Univ Calif Davis, Dept Phys & Astron, Davis, CA 95616 USA
关键词
junctions; molecular films; optoelectronic properties; semiconductors; SELF-ASSEMBLED MONOLAYERS; RECTIFYING JUNCTIONS; IRON PHTHALOCYANINE; SURFACES; METAL; INJECTION; AG;
D O I
10.1002/adfm.202208507
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic p-n junctions attract widespread interest in the field of molecular electronics because of their unique optoelectronic singularities. Importantly, the molecular donor/acceptor character is strongly correlated to the degree of substitution, e.g., the introduction of electron-withdrawing groups. Herein, by gradually increasing the degree of peripheral fluorination on planar, D(4h-)symmetric iron(II) phthalocyanato (FePc) complexes, the energy level alignment and molecular order is defined in a metal-supported bilayered Pc-based junction using photoemission orbital tomography. This non-destructive method selectively allows identifying molecular levels of the hetero-architectures. It demonstrates that, while the symmetric fluorination of FePc does not disrupt the long-range order and degree of metal-to-molecule charge transfer in the first molecular layer, it strongly impacts the energy alignment in both the interface and topmost layer in the bilayered structures. The p-n junction formed in the bilayer of perhydrogenated FePc and perfluorinated FeF16Pc may serve as an ideal model for understanding the basic charge-transport phenomena at the metal-supported organic-organic interfaces, with possible application in photovoltaic devices.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
    ANUPYLD, AY
    GORYUNOV, NN
    DMITRIYE.AI
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
  • [42] P-N JUNCTIONS IN LEAD TELLURIDE
    DAY, HM
    MACPHERSON, A
    PROCEEDINGS OF THE IEEE, 1963, 51 (10) : 1362 - &
  • [43] Electron holography of p-n junctions
    Frost, BG
    Joy, DC
    Allard, LF
    Volkl, E
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 595 - 598
  • [44] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN ZNSE
    LOZYKOWSKII, H
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1963, 13 (02) : 164 - &
  • [45] BOUNDARY CONDITIONS AT P-N JUNCTIONS
    HAUSER, JR
    SOLID-STATE ELECTRONICS, 1971, 14 (02) : 133 - &
  • [46] ON MODE CONFINEMENT IN P-N JUNCTIONS
    LEITE, RCC
    YARIV, A
    PROCEEDINGS OF THE IEEE, 1963, 51 (07) : 1035 - &
  • [47] THICK P-N JUNCTIONS IN GERMANIUM
    BRAY, R
    VANDERMAESEN, F
    PHYSICAL REVIEW, 1953, 91 (01): : 231 - 231
  • [48] THERMOELECTRIC BEHAVIOR OF P-N JUNCTIONS
    CUTLER, M
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 222 - &
  • [49] ON P-N JUNCTIONS AT VARIABLE SIGNALS
    DOLOCAN, V
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (06) : 589 - &
  • [50] Epitaxial Graphene p-n Junctions
    Hu, Jiuning
    Kruskopf, Mattias
    Yang, Yanfei
    Wu, Bi-Yi
    Tian, Jifa
    Panna, Alireza
    Rigosi, Albert F.
    Lee, Hsin-Yen
    Payagala, Shamith
    Jones, George R.
    Kraft, Marlin E.
    Jarrett, Dean G.
    Watanabe, Kenji
    Taniguchi, Takashi
    Elmquist, Randolph E.
    Newell, David B.
    2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018,