Recent developments in the MOCVD and ALD of rare earth oxides and silicates

Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 mu m CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-K dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrOx, La2O3, Gd2O3, Nd2O3 and their related silicates are reviewed. (c) 2005 Elsevier B.V. All rights reserved.