ZnO films grown on ZnO-buffered a-plane sapphire substrates by hydrothermal method

被引：12

作者：

Wu, Huaihao ^{[1
]}

Hu, Zuofu ^{[1
]}

Li, Bin ^{[1
]}

Wang, Hailong ^{[1
]}

Zhou, Dongzhan ^{[1
]}

Zhang, Xiqing ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Laoratory Luminescence & Opt Informat, Beijing 100044, Peoples R China

来源：

MATERIALS LETTERS | 2018年 / 232卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Thin films; Hydrothermal; Epitaxial growth; A-plane Sapphire substrate; Optical materials and properties; EPITAXIAL-GROWTH; NANOROD ARRAYS;

D O I：

10.1016/j.matlet.2018.08.118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were grown on (11 (2) over bar0) sapphire substrate with a ZnO buffer layer using the hydrothermal method, under atmospheric pressure. The surface of the ZnO film was visualized with SEM. The wurtzite crystalline structure and preferred (0001) orientation of the ZnO film was observed with X-ray diffraction. Raman scatterings and photoluminescence verified the low density of impurities and defects. The overall test results demonstrated that the proposed method simply and effectively synthesized high-quality ZnO film. The influence of the precursor concentration on their morphologies and properties were investigated. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：206 / 208

页数：3

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