A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

被引:3
|
作者
Zhu Hongyue [1 ,2 ]
Cheng Xinhong [1 ]
Xia Yifei [1 ,2 ]
Xu Dawei [1 ]
Liu Tiantian [1 ,2 ]
Zhang Zhenwei [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2020年 / 17卷 / 11期
关键词
blanking time; IGBT; de-saturation short-circuit protection; FAULT-DETECTION; RELIABILITY; BEHAVIOR;
D O I
10.1587/elex.17.20200019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposed a self-adaptive blanking time (SABT) circuit for fast IGBT de-saturation short-circuit detection. When IGBT normally turns on or experiences fault under load (FUL), the blanking time is implemented by detecting the variation of IGBT collector-to-emitter voltage V-CE. While when IGBT is under hard switching failure (HSF), the blanking time is determined by detecting gate voltage V-GE. The simulation with the UMC 0.6 mu m 700V technology indicates that the proposed SABT circuit can quickly detect FUL and HSF. Compared to the conventional blanking time circuit, the SABT circuit can shorten the fault detection time of FUL from 1.3 mu s to 35.3 ns, while the fault detection time of HSF condition is reduced from 2.329 mu s to 294 ns.
引用
收藏
页数:6
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