Effect of rapid thermal annealing on the properties of μPCVD and PECVD silicon nitride thin films

被引：0
|
作者：
Bakardjieva, V
Beshkov, G
Vitanov, P
Alexieva, Z
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期
关键词：
silicon nitride films; FTIR; etch rates; C-V measurements;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin silicon nitride films have been deposited on p-Si (100) substrates using optimised standard technological conditions in micro pressure chemical vapour deposition (mu PCVD) and plasma enhanced chemical vapour deposition (PECVD) reactors at 760 degrees C and 380 degrees C respectively. The as-deposited films were annealed by rapid thermal annealing (RTA) at 800, 1000, 1200 and 1400 degrees C for varying annealing times: 15 -180 sec. The FTIR spectra showed that the Si-N characteristic peak moves to higher frequencies with annealing temperature increase. The etch rates in concentrated HF acid depends strongly on RTA temperature. The effect of RTA conditions on the dielectric strength, fixed charge density and hysteresis width has been determined.
引用
收藏
页码：377 / 380
页数：4
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